Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction losses· Improved junction-case thermal resistanceApplication· Switching applicationSpecifications Symbol Item Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VGS Gat...
STS20NHS3LL: Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction losses· Improved junction-case thermal resistanceApplication· Switching applicationSpecifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Item |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VGS |
Gate- source Voltage |
±16 |
V |
Id(1) |
Drain Current (continuos) at TC = 25°C |
20 |
A |
Id |
Drain Current (continuos) at TC = 100°C |
12.6 |
A |
IDM(2) |
Drain Current (pulsed) |
80 |
A |
PTOT |
Total Dissipation at TC = 25°C |
2.7 |
W |
TJ TSTG |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|
This STS20NHS3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology and a proprietary process for integrating a monolithic Schottky diode. The new Power MOSFET STS20NHS3LL is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom.