Features: `100 kHz PWM with ±5% frequency jittering for EMI noise filtering cost reduction`Rugged 650 V avalanche-rated MOSFET: • Simplified surge absorption • No VDSS derating required`Low RDS(on) : 6 maximum`Auto-burst mode for stand-by operation or light loads;less transformer aud...
STR-A6259H: Features: `100 kHz PWM with ±5% frequency jittering for EMI noise filtering cost reduction`Rugged 650 V avalanche-rated MOSFET: • Simplified surge absorption • No VDSS derating required...
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Characteristic | Symbol | Terminal | Note | Max. | Unit |
Drain Current1 | IDpeak | 8-1 | Single Pulse | 1.8 | A |
Maximum Switching Current | IDMAX | 8-1 | VS/OCP = 0.83 V with reference to GND, TA = 20 to 125°C |
1.8 | A |
Single Pulse Avalanche Energy2 | EAS | 8-1 | Single Pulse | 24 | mJ |
VDD = 99 V, L = 20 mH, IL = 1.8 A | 24 | mJ | |||
S/OCP Terminal Voltage | VOCP | 1-3 | 0.3 to 6 | V | |
Controller (MIC) Input Voltage | Vcc | 5-3 | 36 | V | |
FB/CC/OLP Terminal Voltage | VFB | 4-3 | 0.3 to 11 | V | |
FM Terminal Voltage | VFM | 2-3 | 0.3 to 6 | V | |
MOSFET Power Dissipation3,4 | PD1 | 8-1 | 1.35 | W | |
Controller (MIC) Power Dissipation5 | PD2 | 5-3 | For Vcc*Icc | 0.15 | W |
Operating Internal Frame Temperature6 | TF | Refer to TOP | 20 to 125 | °C | |
Operating Ambient Temperature | Top | 20 to 125 | °C | ||
Storage Temperature | Tstg | 40 to 125 | °C | ||
Channel Junction Temperature | TJ | 150 | °C |