STR-A6259H

Features: `100 kHz PWM with ±5% frequency jittering for EMI noise filtering cost reduction`Rugged 650 V avalanche-rated MOSFET: • Simplified surge absorption • No VDSS derating required`Low RDS(on) : 6 maximum`Auto-burst mode for stand-by operation or light loads;less transformer aud...

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STR-A6259H Picture
SeekIC No. : 004508706 Detail

STR-A6259H: Features: `100 kHz PWM with ±5% frequency jittering for EMI noise filtering cost reduction`Rugged 650 V avalanche-rated MOSFET: • Simplified surge absorption • No VDSS derating required...

floor Price/Ceiling Price

Part Number:
STR-A6259H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/5

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Product Details

Description



Features:

`100 kHz PWM with ±5% frequency jittering for
    EMI noise filtering cost reduction
`Rugged 650 V avalanche-rated MOSFET:
       • Simplified surge absorption
       • No VDSS derating required
`Low RDS(on) : 6 maximum
`Auto-burst mode for stand-by operation or light loads; 
   less transformer audible noise
`Built-in leading edge blanking
`Soft start and low start-up current; start-up circuit
   disabled in operation
`Auto-burst stand-by (intermittent operation) input
   power <0.1 W at no load
`Built-in constant-voltage/constant current (CV/CC)
`Multiple protections:
       • Pulse-by-pulse overcurrent protection (OCP)
       • Overload protection (OLP) with auto restart
• Latching overvoltage protection (OVP)
• Undervoltage lockout (UVLO) with hysteresis
• Latching thermal shutdown (TSD)



Specifications

Characteristic Symbol Terminal Note Max. Unit
Drain Current1 IDpeak 8-1 Single Pulse 1.8 A
Maximum Switching Current IDMAX 8-1 VS/OCP = 0.83 V with reference to GND,
TA = 20 to 125°C
1.8 A
Single Pulse Avalanche Energy2 EAS 8-1 Single Pulse 24 mJ
VDD = 99 V, L = 20 mH, IL = 1.8 A 24 mJ
S/OCP Terminal Voltage VOCP 1-3   0.3 to 6 V
Controller (MIC) Input Voltage Vcc 5-3   36 V
FB/CC/OLP Terminal Voltage VFB 4-3   0.3 to 11 V
FM Terminal Voltage VFM 2-3   0.3 to 6 V
MOSFET Power Dissipation3,4 PD1 8-1   1.35 W
Controller (MIC) Power Dissipation5 PD2 5-3 For Vcc*Icc 0.15 W
Operating Internal Frame Temperature6 TF   Refer to TOP 20 to 125 °C
Operating Ambient Temperature Top     20 to 125 °C
Storage Temperature Tstg     40 to 125 °C
Channel Junction Temperature TJ     150 °C
1Refer to figure 1
2Refer to figure 3
3Refer to figure 5
4Mounted on 15 x 15 mm printed circuit board
5Refer to figure 6
6Measured at the root of terminal 3



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