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STQ1NK60ZR-AP

MOSFET N-CH 600V 0.3A TO-92

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SeekIC No. : 003431009 Detail

STQ1NK60ZR-AP: MOSFET N-CH 600V 0.3A TO-92

STQ1NK60ZR-AP Data Sheet

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US $ .09~.12 / Piece | Get Latest Price
Part Number:
STQ1NK60ZR-AP
Mfg:
Supply Ability:
5000

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  • Unit Price
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  • $.09
  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: SuperMESH™ Manufacturer: STMicroelectronics
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Typical Resistor Ratio : 4.5 Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 300mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) @ Vgs: 6.9nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 94pF @ 25V
Power - Max: 3W Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 3W
Current - Continuous Drain (Id) @ 25° C: 300mA
Drain to Source Voltage (Vdss): 600V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Packaging: Tape & Box (TB)
Series: SuperMESH™
Manufacturer: STMicroelectronics
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Gate Charge (Qg) @ Vgs: 6.9nC @ 10V
Input Capacitance (Ciss) @ Vds: 94pF @ 25V
Supplier Device Package: TO-92


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