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STP8NM60FP: MOSFET N-Ch 600 Volt 8 Amp

STP8NM60FP Data Sheet

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Part Number:: STP8NM60FP
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/10/30

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Features: `TYPICAL RDS(on) = 8.5 mW`AVALANCHE RUGGED TECHNOLOGY`100% AVALANCE TESTED`HIGH CURRENT ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	8 A
Resistance Drain-Source RDS (on) :	1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220FP	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1 Ohms

Parameters:

Technical/Catalog Information	STP8NM60FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NM60FP STP8NM60FP

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STP8NM60FP

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