STP8NM60

MOSFET N-Ch 600 Volt 8 Amp

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SeekIC No. : 00163055 Detail

STP8NM60: MOSFET N-Ch 600 Volt 8 Amp

floor Price/Ceiling Price

Part Number:
STP8NM60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1 Ohms


Parameters:

Technical/Catalog InformationSTP8NM60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP8NM60
STP8NM60
497 5397 5 ND
49753975ND
497-5397-5



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