STP8NK80ZFP

MOSFET N-Ch 800 Volt 6.2 A

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SeekIC No. : 00149340 Detail

STP8NK80ZFP: MOSFET N-Ch 800 Volt 6.2 A

floor Price/Ceiling Price

US $ 1.03~1.61 / Piece | Get Latest Price
Part Number:
STP8NK80ZFP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.61
  • $1.41
  • $1.16
  • $1.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 800 V


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.




Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
·LIGHTING



Specifications

Symbol Parameter Value Unit
  STP8NK80Z - STW8NK80Z   STP8NK80ZFP  
VDS

Drain-source Voltage (VGS = 0)

800 V
VDGR

Drain- gate Voltage (RGS = 20 k)

800 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

6.2 6.2 (*) A
ID

Drain Current (continuous) at Tc = 100

3.9 3.9 (*) A
IDM(.)

Drain Current (pulsed)

24.8 24.8 (*) A
PTOT

Total Dissipation at Tc = 25

140 30 W

Derating Factor

1.12 0.24 W/

 VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5 K)

 4000

 V

 dv/dt(1)

Peak Diode Recovery voltage slope

4.5

 V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tj
Tstg

Operating Junction Temperature
Storage Temperature

-55 to 150
(•)Pulse width limited by safe operating area
(1)ISD 6.2A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed



Description

The STP8NK80ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage STP8NK80ZFP MOSFETs including revolutionary MDmesh™ products.




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