STP80NF55-08

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 8 mOhms


Application

·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-source Voltage (VGS = 0)	55	V
VDGR	Drain-gate Voltage (RGS = 20 kW)	55	V
VGS	Gate- source Voltage	± 20	v
ID	Drain Current (continuous) at TC = 25°C	80	A
ID	Drain Current (continuous) at TC = 100°C	57	A
IDM(·)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at TC = 25°C	300	W
	Derating Factor	2	W/°C
EAS (1)	Single Pulse Avalanche Energy	870	mJ
Tstg	Storage Temperature	-55 to + 75	°C
Tj	Max. Operating Junction Temperature	-55 to + 75	°C

Description

This Power MOSFET STP80NF55-08 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STP80NF55-08
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	3850pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP80NF55 08 STP80NF5508 497 3202 5 ND 49732025ND 497-3202-5