STP80NF55-06FP

MOSFET N-Ch, 55V-0.005ohms 80A

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SeekIC No. : 00157050 Detail

STP80NF55-06FP: MOSFET N-Ch, 55V-0.005ohms 80A

floor Price/Ceiling Price

US $ .83~1.05 / Piece | Get Latest Price
Part Number:
STP80NF55-06FP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~640
  • 640~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.05
  • $.91
  • $.87
  • $.83
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.0065 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.0065 Ohms


Application

·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT



Specifications

Symbol
Parameter
Value
Unit
STP80NF55-06
STP55NF55-06FP
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
55
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C
80
60
A
ID
Drain Current (continuous) at TC = 100°C
57
42
A
IDM (·)
Drain Current (pulsed)
320
240
A
PTOT
Total Dissipation at TC = 25°C
210
50
W
Derating Factor
1.43
0.33
W/°C
VISO
Insulation Withstand Voltage (DC)
-

 2000

V
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
-65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(•) Pulse width limited by safe operating area ( 1) ISD 3 80 A, di/dt 3 300 A/ms, VDD 3 V(BR)DSS, Tj 3 TJMAX


Description

This STP80NF55-06FP Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP80NF55-06FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs189nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP80NF55 06FP
STP80NF5506FP



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