STP80NE06-10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

* TYPICAL RDS(on) = 0.0085
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* APPLICATION ORIENTED
   CHARACTERIZATION


Application

* SOLENOID AND RELAY DRIVERS
* MOTOR CONTROL, AUDIO AMPLIFIERS
* DC-DC CONVERTERS
* AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	57	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	150	W
	Derating Factor	1	W/
dv/dt	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

Description

This Power MOSFET STP80NE06-10 is the latest development of SGS-THOMSON unique "Single Feature Size^TM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STP80NE06-10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	10 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	10000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP80NE06 10 STP80NE0610 497 2778 5 ND 49727785ND 497-2778-5