MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH
STP6NK60Z: MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH
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Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 1200 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | Value | Unit | |
STP6NK60Z STB6NK60Z STB6NK60Z-1 |
STP6NK60ZFP | |||
VDS | Drain-source Voltage (VGS =0) | 600 | V | |
VDGR | Drain-gate Voltage (RGS =20kΩ) | 600 | V | |
VGS | Gate- source Voltage | ±30 | V | |
ID | Drain Current (continuous) at TC = 25°C | 6 | 6(*) | A |
ID | Drain Current (continuous) at TC =100°C | 3.8 | 3.8 (*) | A |
IDM (` ) | Drain Current (pulsed) | 2.4 | 2.4 (*) | A |
PTOT | Total Dissipation at TC = 25°C | 110 | 32 | W |
Derating Factor | 0.88 | 0.24 | W/°C | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 3500 | KV | |
dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | |
VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg,Tj |
Storage TemperatureOperating Junction Temperature |
-65to150 -65to150 |
°C °C |
Technical/Catalog Information | STP6NK60Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 905pF @ 25V |
Power - Max | 110W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 46nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP6NK60Z STP6NK60Z 497 3198 5 ND 49731985ND 497-3198-5 |