MOSFET N-channel 620V 1.1
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Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 620 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.5 A | ||
Resistance Drain-Source RDS (on) : | 1200 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | STP6N62K3 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25° C | 5.5A |
Rds On (Max) @ Id, Vgs | 1.28 Ohm @ 2.8A, 10V |
Input Capacitance (Ciss) @ Vds | 706pF @ 50V |
Power - Max | 90W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 25.7nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP6N62K3 STP6N62K3 497 8450 5 ND 49784505ND 497-8450-5 |