STP60NF06LFP

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.014 Ohms


Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
 AUTOMOTIVE


Specifications

Symbol	Parameter	Value		Unit
		STB60NF06L STP60NF06L	STP60NF06LFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k)	60		V
VGS	Gate- source Voltage	± 15		V
ID	Drain Current (continuous) at TC = 25°C	60	60(*)	A
ID	Drain Current (continuous) at TC = 100°C	42	42(*)	A
IDM(`)	Drain Current (pulsed)	240	240(*)	A
Ptot	Total Dissipation at TC = 25°C	110	30	W
	Derating Factor	0.73	0.2	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
EAS (2)	Single Pulse Avalanche Energy	320		mJ
VISO	Insulation Withstand Voltage (DC)	------	2000	V
Tstg	Storage Temperature	-55 to 175		°C
Tj	Operating Junction Temperature

Description

This MOSFET series STP60NF06LFP realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.