STP55NF06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 18 mOhms


Application

 HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE


Specifications

Symbol	Parameter	Value		Unit
		STP_B55NF06(-1)	STP55NF06FP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k)	60		V
VGS	Gate- source Voltage	± 20		V
ID	Drain Current (continuos) at TC = 25°C	50	50(*)	A
ID	Drain Current (continuos) at TC = 100°C	35	35(*)	A
IDM ()	Drain Current (pulsed)	200	200(*)	A
PTOT	Total Dissipation at TC = 25°C	110	30	W
	Derating Factor	0.73	0.2	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	7		V/ns
EAS (2)	Single Pulse Avalanche Energy	350		mJ
Tstg	Storage Temperature	-55 to 175		°C
Tj	Operating Junction Temperature

Description

This STP55NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.

Parameters:

Technical/Catalog Information	STP55NF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	18 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP55NF06 STP55NF06 497 2777 5 ND 49727775ND 497-2777-5