MOSFET N-channel 600V, 21A FDMesh II
STP25NM60ND: MOSFET N-channel 600V, 21A FDMesh II
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 21 A | ||
Resistance Drain-Source RDS (on) : | 0.16 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | STP25NM60ND |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 21A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 50V |
Power - Max | 160W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP25NM60ND STP25NM60ND 497 8446 5 ND 49784465ND 497-8446-5 |