STP25NM60ND, US $ 2.81-3.95 , STMicroelectronics, STP25NM60ND DataSheet download, circuit diagram from SeekIC.com

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STP25NM60ND: MOSFET N-channel 600V, 21A FDMesh II

STP25NM60ND Data Sheet

US $ 2.81~3.95 / Piece | Get Latest Price

Part Number:: STP25NM60ND
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	21 A
Resistance Drain-Source RDS (on) :	0.16 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 21 A
Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.16 Ohms

Parameters:

Technical/Catalog Information	STP25NM60ND
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	160 mOhm @ 10.5A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 50V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP25NM60ND STP25NM60ND 497 8446 5 ND 49784465ND 497-8446-5

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STP25NM60ND

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