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STP23NM60N: MOSFET N-Channel 600V Power MDmesh

STP23NM60N Data Sheet

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Part Number:: STP23NM60N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	19 A
Resistance Drain-Source RDS (on) :	0.18 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V

Parameters:

Technical/Catalog Information	STP23NM60N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	180 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 50V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP23NM60N STP23NM60N 497 7517 5 ND 49775175ND 497-7517-5

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STP23NM60N

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