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STP22NS25Z

MOSFET N-Ch 250 Volt 22 Amp

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SeekIC No. : 00160181 Detail

STP22NS25Z: MOSFET N-Ch 250 Volt 22 Amp

STP22NS25Z Data Sheet

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Part Number:
STP22NS25Z
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
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Upload time: 2024/12/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-220
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.15 Ohms


Features:

 ` TYPICAL RDS(on) = 0.13
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SWITH MODE POWER SUPPLIES (SMPS)
 · DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)
250
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
22
A
ID Drain Current (continuos) at TC = 100
13.9
A
IDM() Drain Current (pulsed)
88
A
PTOT Total Dissipation at TC = 25
135
W
  Derating Factor
1.07
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2500
V
dv/dt (1) Peak Diode Recovery voltage slope
5
 V/ns
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(1) ISD 22A, di/dt200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs STP22NS25Z with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.




Parameters:

Technical/Catalog InformationSTP22NS25Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs150 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs151nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP22NS25Z
STP22NS25Z
497 6740 5 ND
49767405ND
497-6740-5



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