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STP22NE10L

Features: TYPICAL RDS(on) = 0.07 LOW THRESHOLD DRIVE LOGIC LEVEL DEVICEApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100...

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STP22NE10L: Features: TYPICAL RDS(on) = 0.07 LOW THRESHOLD DRIVE LOGIC LEVEL DEVICEApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVE...

STP22NE10L Data Sheet

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Part Number:
STP22NE10L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.07
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k ) 100 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 22 A
ID Drain Current (continuos) at TC = 100 14 A
IDM() Drain Current (pulsed) 88 A
PTOT Total Dissipation at TC = 25 90 W
  Derating Factor 0.6 W/
EAS(1) Single Pulse Avalanche Energy 250 mJ
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150

(•)  Pulse width limited by safe operating area ( 1) starting Tj = 25, ID =22A , VDD = 50V




Description

This STP22NE10L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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