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STP21NM60N

MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh

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SeekIC No. : 00161106 Detail

STP21NM60N: MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh

STP21NM60N Data Sheet

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Part Number:
STP21NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.19 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTP21NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs220 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP21NM60N
STP21NM60N
497 5019 5 ND
49750195ND
497-5019-5



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