STP200NF04L

MOSFET N-Ch 30 V 3 mOhm 120 A STripFET

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SeekIC No. : 00159013 Detail

STP200NF04L: MOSFET N-Ch 30 V 3 mOhm 120 A STripFET

floor Price/Ceiling Price

US $ 1.08~1.08 / Piece | Get Latest Price
Part Number:
STP200NF04L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~820
  • Unit Price
  • $1.08
  • Processing time
  • 15 Days
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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 3 m Ohms


Features:

` TYPICAL RDS(on) = 3m
` 100% AVALANCHE TESTED
` LOW THERESHOLD DRIVE



Application

· HIGH CURRENT, HIGH SWITCHING SPEED


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 40 V
VGDR Drain-gate Voltage (RGS=20 K) 40 V
VGS Gate- source Voltage ± 16 V
ID (**) Drain Current (continuous) at TC = 25°C 120 A
ID Drain Current (continuous) at TC = 100°C 120 A
IDM (2) Drain Current (pulsed) 480 A
PTOT Total Dissipation at TC = 25°C 300 W
  Derating Factor 2 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3.6 V/ns
EAS (3) Single Pulse Avalanche Energy 1.4 J
Tstg Storage Temperature -55 to 175 °C
Tj Max. Operating Junction Temperature
(1)ISD < 100 A, di/dt < 240 A/s, VDD < 32 , Tj < TJMAX
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V
(**) Current limited by Package



Description

This STP200NF04L MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.




Parameters:

Technical/Catalog InformationSTP200NF04L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs3.8 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 6400pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP200NF04L
STP200NF04L
497 4819 5 ND
49748195ND
497-4819-5



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