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STP200NF04

MOSFET N-Ch 40 Volt 120 Amp

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SeekIC No. : 00151404 Detail

STP200NF04: MOSFET N-Ch 40 Volt 120 Amp

STP200NF04 Data Sheet

floor Price/Ceiling Price

US $ 1.37~2.11 / Piece | Get Latest Price
Part Number:
STP200NF04
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $2.11
  • $1.7
  • $1.54
  • $1.37
  • Processing time
  • 15 Days
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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0037 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0037 Ohms


Features:

· STANDARD THRESHOLD DRIVE
· 100% AVALANCHE TESTED


Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· AUTOMOTIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID(#) Drain Current (continuos) at TC = 25
120
A
ID(#) Drain Current (continuos) at TC = 100
120
A
IDM(`) Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
310
W
Derating Factor
2.07
W/
dv/dt (1) Peak Diode Recovery voltage slope
1.5
V/ns
EAS(2) Single Pulse Avalanche Energy
1.3
J
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 175

(`) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 500A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package


Description

This MOSFET STP200NF04 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP200NF04
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs3.7 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP200NF04
STP200NF04
497 3524 5 ND
49735245ND
497-3524-5



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