STN3PF06

MOSFET P-Ch 60 Volt 2.5 Amp

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SeekIC No. : 00149498 Detail

STN3PF06: MOSFET P-Ch 60 Volt 2.5 Amp

floor Price/Ceiling Price

US $ .36~.6 / Piece | Get Latest Price
Part Number:
STN3PF06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 200 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Package / Case : SOT-223
Continuous Drain Current : 2.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 200 mOhms


Features:

 TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE



Application

 DC-DC & DC-AC CONVERTERS
 DC MOTOR CONTROL (DISK DRIVES, etc.)



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
2.5 A
ID Drain Current (continuos) at TC = 100 1.5 A
IDM() Drain Current (pulsed) 10 A
PTOT Total Dissipation at TC = 25 2.5 W
  Derating Factor 0.02 W/
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 150

(l) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed
(1) ISD 3A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX




Description

This Power Mosfet STN3PF06 is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTN3PF06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs220 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN3PF06
STN3PF06
497 4116 2 ND
49741162ND
497-4116-2



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