STM9926

The STM9926 is designed as dual N-channel enhancement mode field effect transistor. Its Vdss is 20V and its Id is 6.5A. Its Rds(on) (m) max would be 28m at Vgs=4.0V and 38m at Vgs=2.5V.

STM9926 has four features. The first one is super high dense cell design for low Rds(on). The second one is rugged and reliable. The third one is surface mount package. The last one is ESD protected. That are all the main features.

Some STM9926 absolute maximum ratings (Ta=25°C unless otherwise noted) have been concluded into several points as follow. Its drain to source voltage which would be 20V. Its gate to source voltage would be +/-10V. Its drain current continuous at Tj=25°C would be 6.5A and it would be 30A for pulsed. Its drain to source diode forward current would be 1.7A. Its maximum power dissipation would be 2W. Its operating junction and storage temperature range would be from -55°C to 150°C. Its thermal resistace, junction to ambient would be 62.5°C/W.

Also some STM9926 electrical characteristics (Ta=25°C unless otherwise noted) about it. For its OFF characteristics its drain to source breakdown voltage would be min 20V with condition of Vgs=0V and Id=250uA. Its zero gate voltage drain current would be max 1uA with condition of Vds=16V and Vgs=0V. Its gate-body leakage would be max +/-10uA with condition of Vgs=+/-10V and Vds=0V. For ON characteristics its gate threshold voltage would be min 0.5V and typ 0.9V and max 1.5V with condition of Vds=Vgs and Id=250uA. Its drain to source on-state resistance would be typ 23mohm and max 28mohm with condition of Vgs=4.0V and Id=6.5V and it would be typ 30mohm and max 38mohm with condition of Vgs=2.5V and Id=5A. Its forward transconductance would be typ 16S with condition of Vds=5.0V and Id=6.5A. And so on. If you have any question or suggestion or want know more information please contact us for details. Thank you!