MOSFET N-Ch 650 Volt 4.2Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.76 A | ||
Resistance Drain-Source RDS (on) : | 1.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerFLAT | Packaging : | Reel |