STK0602

Features:

• High density cell design for low RDS(ON).
• Voltage controlled small signal switch
• Include Zener protection for ESD ruggedness.




Pinout






Specifications

Characteristic	Symbol	Ratings	Unit
Drain-Source voltage	VDSS	60	V
Gate-Source voltage	VGS	±8	V
Maximum Drain current	ID	200	mA
Pulsed Drain Current	IDP	800	mA
Drain Power dissipation	PD	200	mW
Operating Junction and Storage temperature range	TJ , Tstg	-55~150

Description

These Small Signal MOSFET are produced using DMOS technology. And Cell density is very high. These products have been designed to minimize on-state resistance while provide reliable, and fast switching performance. These products are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

• High speed switching application.