IGBT Transistors N Ch 600V 50A Max247
STGY40NC60VD: IGBT Transistors N Ch 600V 50A Max247
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | Max247-3 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
VECR |
Reverse Battery Protection |
20 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
IC |
Collector Current (continuous) at 25°C (#) |
80 |
A | |
IC |
Collector Current (continuous) at 100°C (#) |
50 |
A | |
ICM(•) |
Collector Current (pulsed) |
200 |
A | |
IF |
Diode RMS Forward Current at TC =25°C |
30 |
A | |
Ptot |
Total Dissipation at Tc = 25 °C |
260 |
W | |
Derating Factor |
2.08 |
W/oC | ||
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
Tj |
Operating Junction Temperature |
Using the latest high voltage technology based on a patented strip layout, STGY40NC60VD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency.