STGP10NC60KD

IGBT Transistors PowerMESH" IGBT

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SeekIC No. : 00142263 Detail

STGP10NC60KD: IGBT Transistors PowerMESH" IGBT

floor Price/Ceiling Price

US $ .44~.73 / Piece | Get Latest Price
Part Number:
STGP10NC60KD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.73
  • $.59
  • $.5
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 100 nA Power Dissipation : 25 W
Maximum Operating Temperature : + 150 C Package / Case : TO-220-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Power Dissipation : 25 W
Package / Case : TO-220-3


Features:

· LOWER ON-VOLTAGE DROP (Vcesat)
· OFF LOSSES INCLUDE TAIL CURRENT
· LOWER CRES / CIES RATIO
· SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY
· VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
· NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION



Application

·HIGH FREQUENCY MOTOR CONTROLS
·SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
·MOTOR DRIVERS



Specifications

Symbol Parameter Value   Unit
    STGB10NC60KD
STGP10NC60KD
STGF10NC60KD  
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 200 V
VGE Gate-Emitter Voltage ±20 V
IC Collector Current (continuous) at TC = 25°C (#) 20 9 A
IC Collector Current (continuous) at TC = 100°C (#) 10 6 A
ICM (`) Collector Current (pulsed) 40 A
IF Diode RMS Forward Current at TC = 25°C 10 A
PTOT Total Dissipation at TC = 25°C 60 25 W
  Derating Factor 0.48 0.20 W/°C
VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) - 2500 V
Tstg Storage Temperature 55 to 150 °C
Tj Operating Junction Temperature
(`􀀀)Pulse width limited by max. junction temperature.


Description

Using the latest high voltage technology based on a patented strip layout, STGP10NC60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.




Parameters:

Technical/Catalog InformationSTGP10NC60KD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 5A
Power - Max60W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGP10NC60KD
STGP10NC60KD
497 5120 5 ND
49751205ND
497-5120-5



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