STGP10NC60HD

IGBT Transistors PowerMESH TM IGBT

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SeekIC No. : 00142506 Detail

STGP10NC60HD: IGBT Transistors PowerMESH TM IGBT

floor Price/Ceiling Price

US $ .42~.7 / Piece | Get Latest Price
Part Number:
STGP10NC60HD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.7
  • $.58
  • $.48
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 100 nA Power Dissipation : 56 W
Maximum Operating Temperature : + 150 C Package / Case : DPAK-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : DPAK-3
Power Dissipation : 56 W


Parameters:

Technical/Catalog InformationSTGP10NC60HD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 5A
Power - Max65W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGP10NC60HD
STGP10NC60HD
497 5118 5 ND
49751185ND
497-5118-5



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