IGBT Transistors PowerMESH TM IGBT
STGP10NC60HD: IGBT Transistors PowerMESH TM IGBT
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 56 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | DPAK-3 |
Packaging : | Tube |
Technical/Catalog Information | STGP10NC60HD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
Power - Max | 65W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGP10NC60HD STGP10NC60HD 497 5118 5 ND 49751185ND 497-5118-5 |