STGP10NB60SDFP Selling Leads, Price trend, STGP10NB60SDFP DataSheet download, circuit diagram from SeekIC.com

Features: HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTApplicationLIGHT DIMMERSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR...

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STGP10NB60SDFP: Features: HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTApplicationLIGHT DIMMERSTATIC RELAYSMOTOR CONTROLSpecifications Symbol...

STGP10NB60SDFP Data Sheet

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Part Number:: STGP10NB60SDFP
Supply Ability:: 5000

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Upload time: 2024/12/25

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IGBT Transistors 330volt 90 Amp
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
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US $1.1 - 1.46 / Piece

IGBT Transistors N-Ch Clamped 20 Amp

Product Details

Description

Features:

HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT

Application

LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL

Specifications

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	20	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	10	A
I_CM(•)	Collector Current (pulsed)	80	A
P_tot	Total Dissipation at T_c= 25 ^oC	30	W
	Derating Factor	0.2	W/^oC
V_ISO	Insulation Withstand Voltage A.C.(t = 1 sec; T_c= 25°C)	2500	V
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	175	^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGP10NB60SDFP STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

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