Features: HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTApplicationLIGHT DIMMERSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR...
STGP10NB60SDFP: Features: HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTApplicationLIGHT DIMMERSTATIC RELAYSMOTOR CONTROLSpecifications Symbol...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
VECR |
Emitter-Collector Voltage |
20 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
IC |
Collector Current (continuous) at Tc = 25 oC |
20 |
A | |
IC |
Collector Current (continuous) at Tc = 100 oC |
10 |
A | |
ICM(•) |
Collector Current (pulsed) |
80 |
A | |
Ptot |
Total Dissipation at Tc = 25 oC |
30 |
W | |
Derating Factor |
0.2 |
W/oC | ||
VISO |
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) |
2500 |
V | |
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
Tj |
Max.Operating Junction Temperature |
175 |
oC |
Using the latest high voltage technology based on a patented strip layout, STGP10NB60SDFP STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).