STGP10NB60SD

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3
Power Dissipation : 3.5 W


Features:

·HIGH CURRENT CAPABILITY
·HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)


Application

·LIGHT DIMMER
·STATIC RELAYS
·MOTOR CONTROL


Specifications

Symbol	Parameter	Value	Unit
VCES IC Note 5 IC Note 5 ICM Note 1 VGE PTOT	Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at TC=25 Collector Current (continuous) at TC=100 Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC=25	600 20 10 80 ±20 31.5	V A A W A W
Tj	Operating Junction Temperature	-65 to 15
Tstg	Storage Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGP10NB60SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH^TM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz).

Parameters:

Technical/Catalog Information	STGP10NB60SD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 10A
Power - Max	*
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP10NB60SD STGP10NB60SD 497 5008 5 ND 49750085ND 497-5008-5