STGD6NC60HDT4, US $ .91-1.4 , STMicroelectronics, STGD6NC60HDT4 DataSheet download, circuit diagram from SeekIC.com

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STGD6NC60HDT4: IGBT Transistors PowerMESH" IGBT

STGD6NC60HDT4 Data Sheet

US $ .91~1.4 / Piece | Get Latest Price

Part Number:: STGD6NC60HDT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	1.9 V	Maximum Gate Emitter Voltage :	+/- 20 V
Gate-Emitter Leakage Current :	100 nA	Power Dissipation :	50 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	DPAK-3
Packaging :	Reel

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : DPAK-3
Power Dissipation : 50 W

Parameters:

Technical/Catalog Information	STGD6NC60HDT4
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	15A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Power - Max	56W
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGD6NC60HDT4 STGD6NC60HDT4 497 5112 6 ND 49751126ND 497-5112-6

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STGD6NC60HDT4

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