IGBT Transistors N-channel MOSFET
STGD14NC60KT4: IGBT Transistors N-channel MOSFET
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-252-3 | Packaging : | Reel |
Technical/Catalog Information | STGD14NC60KT4 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 25A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
Power - Max | 80W |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGD14NC60KT4 STGD14NC60KT4 497 5739 1 ND 49757391ND 497-5739-1 |