Specifications Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VIC Control Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK DC Input Diode Current ± 20 mA IOK DC...
STG719: Specifications Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VIC Control Input Voltage -0.5 to VCC + 0.5 V V...
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Symbol | Parameter | Value | Unit |
VCC |
Supply Voltage |
-0.5 to +7 | V |
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 | V |
VIC |
Control Input Voltage |
-0.5 to VCC + 0.5 | V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 | V |
IIK |
DC Input Diode Current |
± 20 | mA |
IOK |
DC Output Diode Current |
± 20 | mA |
IO |
DC Output Current |
± 50 | mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 | mA |
Tstg |
Storage Temperature |
-65 to +150 | |
TL |
Lead Temperature (10 sec) |
300 |
The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4 ON-Resistance Max at 5V 25. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01W Typ.). ESD immunity is higher than 1000V per Method 3015.7 of MIL-STD-883B. It's avalable in the commercial temperature range.