Features: HIGH SPEED: D = 0.3ns (TYP.) at VCC = 3.0V D = 0.4ns (TYP.) at VCC = 2.3VULTRA LOW POWER DISSIPATION: C = 0.2A (MAX.) at TA = 85°CLOW ON RESISTANCE VIN = 0V: N-S1 = 0.5 (MAX. TA = 25°C) at VCC=2.7V N-S2 = 0.8 (MAX. TA = 25°C) at VCC=2.7VWIDE OPERATING VOLTAGE RANGE: C (OPR) = 1.65V to ...
STG3680: Features: HIGH SPEED: D = 0.3ns (TYP.) at VCC = 3.0V D = 0.4ns (TYP.) at VCC = 2.3VULTRA LOW POWER DISSIPATION: C = 0.2A (MAX.) at TA = 85°CLOW ON RESISTANCE VIN = 0V: N-S1 = 0.5 (MAX. TA = 25°C) ...
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Switching Converters, Regulators & Controllers Lo Vltg 0.5 Ohm Max Sngl SPDT switch
Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to 4.6 |
V |
VIDC |
Input Voltage |
-0.5 to VCC + 0.5 |
V |
VIC |
DC Control Input Voltage |
-0.5 to 4.6 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIKC |
DC Input Diode Current on control pin (VIN< 0V) |
− 50 |
mA |
IIK |
DC Input Diode Current (VIN< 0V) |
± 50 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 300 |
mA |
IOP |
DC Output Current Peak (pulse at 1ms, 10% duty cycle) |
± 500 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 100 |
mA |
PD |
Power Dissipation at Ta=70°C (1) |
1120
|
mW
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
The STG3680 is an high-speed CMOS DUAL NALOG S.P.D.T. (Single Pole Dual Throw) WITCH or DUAL 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS echnology. It is designed to operate from 1.65V to .3V, making this device ideal for portable pplications.
STG3680 offers very low ON-Resistance (<0.5 1S1 and S1 channels; <0.8 1S2 and 2S2 channels) at CC=2.7V. The nIN inputs are provided to control he switches. The switches nS1 are ON (they are onnected to common Ports Dn) when the nIN nput is held high and OFF (high impedance state xists between the two ports) when nIN is held ow; the switches nS2 are ON (they are connected o common Ports Dn) when the nIN input is held ow and OFF (high impedance state exists etween the two ports) when IN is held high. dditional key features are fast switching speed, reak Before Make Delay Time and Ultra Low ower Consumption. All inputs and outputs are quipped with protection circuits against static ischarge, giving them ESD immunity and ransient excess voltage. It's available in the ommercial temperature range in the QFN ackage.