STF9NK80Z

MOSFET SUPERMESH™MOSFET

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SeekIC No. : 00161103 Detail

STF9NK80Z: MOSFET SUPERMESH™MOSFET

floor Price/Ceiling Price

Part Number:
STF9NK80Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

 TYPICAL RDS(on) = 0.9
 EXTREMELY HIGH dv/dt CAPABILITY
 IMPROVED ESD CAPABILITY
 100% AVALANCHE RATED
 GATE CHARGE MINIMIZED
 VERY LOW INTRINSIC CAPACITANCES
 VERY GOOD MANUFACTURING REPEATIBILITY



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 IDEAL FOR OFF-LINE POWER SUPPLIES
 SMPS



Specifications

Symbol
Parameter
Value
Unit
TO-220
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
800
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
800
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
7.5
7.5 (*)
A
ID
Drain Current (continuos) at TC = 100°C
4.7
4.7 (*)
A
IDM ()
Drain Current (pulsed)

30

30 (*)
A
PTOT
Total Dissipation at TC = 25°C
150
35
W
  Derating Factor

1.20

0.28

W/°C

 VESD(G-S)  Gate source ESD(HBM-C=100pF, R=1.5K)

 4000

 V

dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
 
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C



Description

The STF9NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTF9NK80Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 3.75A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 25V
Power - Max35W
PackagingTube
Gate Charge (Qg) @ Vgs84nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF9NK80Z
STF9NK80Z
497 5108 5 ND
49751085ND
497-5108-5



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