STF5NK100Z

MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH

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SeekIC No. : 00147406 Detail

STF5NK100Z: MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH

floor Price/Ceiling Price

US $ 1.42~2.09 / Piece | Get Latest Price
Part Number:
STF5NK100Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.09
  • $1.77
  • $1.54
  • $1.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 3.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.5 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 3.7 Ohms


Features:

`TYPICAL RDS (on) = 2.7
`EXTREMELY HIGH dv/dt CAPABILITY
`IMPROVED ESD CAPABILITY
`100% AVALANCHE RATED
`GATE CHARGE MINIMIZED
`VERY LOW INTRINSIC CAPACITANCES
`VERY GOOD MANUFACTURING REPEATIBILITY

 




Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES



Specifications

Symbol Parameter Value Unit
STP5NK100Z
STW5NK100Z
STF5NK100Z
VDS Drain-source Voltage (VGS = 0)
1000 V
VDGR Drain-gate Voltage (RGS = 20 )
1000 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25
3.5 3.5(*) A
ID Drain Current (continuous) at TC = 100 2.2 2.2(*) A
IDM(`) Drain Current (pulsed) 15 14(*) A
PTOT Total Dissipation at TC = 25
125 30 W
  Derating Factor 1 0.24 W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) 4000 V
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2500 V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150




Description

The STF5NK100Z SuperMESHTM series is obtained through an extreme optimization of ST's well establishe stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmeshTM products.




Parameters:

Technical/Catalog InformationSTF5NK100Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C3.5A
Rds On (Max) @ Id, Vgs3.7 Ohm @ 1.75A, 10V
Input Capacitance (Ciss) @ Vds 1154pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs59nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF5NK100Z
STF5NK100Z
497 4344 5 ND
49743445ND
497-4344-5



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