STF40NF06

MOSFET N-Ch 60 Volt 23 Amp

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SeekIC No. : 00147902 Detail

STF40NF06: MOSFET N-Ch 60 Volt 23 Amp

floor Price/Ceiling Price

US $ .56~.94 / Piece | Get Latest Price
Part Number:
STF40NF06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.94
  • $.77
  • $.63
  • $.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 28 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220FP
Resistance Drain-Source RDS (on) : 28 mOhms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 23 A


Features:

 TYPICAL RDS(on) = 0.024
 EXCEPTIONAL dv/dt CAPABILITY
 LOW GATE CHARGE AT 100°C
 APPLICATION ORIENTED CHARACTERIZATION
 100% AVALANCHE TESTED



Application

 DC-DC & DC-AC CONVERTERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS



Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
60
V

VECR

Emitter-Collector Voltage

60

V

VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
23
A
IC
Collector Current (continuous) at Tc = 100 oC
16
A
ICM(•)
Collector Current (pulsed)
92
A
Ptot
Total Dissipation at Tc = 25 oC
30
W
Derating Factor
0.2
W/oC

 dv/dt(1)

  Peak Diode Recovery voltage slope

 10

 V/ns

 EAS(2)

  Single Pulse Avalanche Energy

 250

  mJ

 VISO

  Insulation Withstand Voltage (DC) 

 2500

 V

Tstg
Storage Temperature
65 to 150

150

oC
 
oC
Tj
Max.Operating Junction Temperature



Description

This STF40NF06 MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTF40NF06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs28 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF40NF06
STF40NF06
497 4343 5 ND
49743435ND
497-4343-5



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