STF3HNK90Z

MOSFET N-Ch 900 Volt 3 Amp

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STF3HNK90Z Picture
SeekIC No. : 00159737 Detail

STF3HNK90Z: MOSFET N-Ch 900 Volt 3 Amp

floor Price/Ceiling Price

Part Number:
STF3HNK90Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.2 Ohms


Features:

· TYPICAL RDS(on) = 3.5 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· GATE CHARGE MINIMIZED
· VERY LOW INTRINSIC CAPACITANCES
· VERY GOOD MANUFACTURING REPEATIBILITY



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
· LIGHTING




Specifications

Symbol
Parameter
Value
Unit
 
STP3HNK90Z
STF3HNK90Z
VDS
Drain-source Voltage (VGS = 0)
900
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
900
V
VGS
Gate- source Voltage
±300
V
ID
Drain Current (continuous) at TC = 25°C
3
3(*)
A
ID
Drain Current (continuous) at TC = 100°C
1.89
1.89(*)
A
IDM (`)
Drain Current (pulsed)
12
12(*)
A
PTOT
Total Dissipation at TC = 25°C
90
25
W
Derating Factor
0.72
0.2
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KW)
3000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
250
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150



Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTF3HNK90Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.2 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF3HNK90Z
STF3HNK90Z
497 4341 5 ND
49743415ND
497-4341-5



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