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STF19NM65N: MOSFET N-Channel 650V 0.25 Ohms 15.5A

STF19NM65N Data Sheet

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Part Number:: STF19NM65N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	15.5 A
Resistance Drain-Source RDS (on) :	0.27 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220FP	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 15.5 A

Parameters:

Technical/Catalog Information	STF19NM65N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	15.5A
Rds On (Max) @ Id, Vgs	270 mOhm @ 7.75A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 50V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF19NM65N STF19NM65N

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STF19NM65N

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