STF14NM65N

MOSFET N-Channel 650V 0.33 Ohms 12A

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SeekIC No. : 00160720 Detail

STF14NM65N: MOSFET N-Channel 650V 0.33 Ohms 12A

floor Price/Ceiling Price

Part Number:
STF14NM65N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.38 Ohms


Parameters:

Technical/Catalog InformationSTF14NM65N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs380 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 50V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF14NM65N
STF14NM65N



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