STE38NB50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.13 Ohms
Package / Case : ISOTOP


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLY (SMPS)
 DC-AC CONVERTER FOR WELDING EQUIPMENT AND
   UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
VCES	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	500		V
VGE	Gate-Emitter Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25 oC	38		A
Id	Drain Current (continuous) at Tc = 100 oC	24		A
ICM(•)	Drain Current (pulsed)	152		A
Ptot	Total Dissipation at Tc = 25 oC	400		W
	Derating Factor	3.2		W/oC
dv/dt(1)	Peak Diode Recovery voltage slope	4.5		V/ns
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature	150		oC

Description

Using the latest high voltage MESH OVERLAYÔ process, STE38NB50 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.