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STD9NM50N-1

MOSFET N-Channel 500V Pwr Mosfet

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SeekIC No. : 00162523 Detail

STD9NM50N-1: MOSFET N-Channel 500V Pwr Mosfet

STD9NM50N-1 Data Sheet

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Part Number:
STD9NM50N-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 0.56 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.56 Ohms


Parameters:

Technical/Catalog InformationSTD9NM50N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs560 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds 570pF @ 50V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD9NM50N 1
STD9NM50N1



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