MOSFET N Ch 24V 0.0068 Ohm 60A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 0.006 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source voltage (VGS = 0) | 30 | V |
VDGR | Drain-gate Voltage (RGS = 20 k) | 24 | V |
VGS | Gate- source voltage | ±15 | V |
ID | Drain current (continuous) at TC = 25°C | 60 | A |
ID | Drain current (continuous) at TC = 100°C | 42 | A |
IDM | Drain current (pulsed) | 240 | A |
PTOT | Total dissipation at TC = 25°C | 70 | W |
Derating factor | 0.47 | W/°C | |
EAS | Peak diode recovery voltage slope | 360 | mJ |
Tj Tstg |
Operating junction temperature Storage temperature |
175 -65 to 175 |
°C |
This series of products STD90N02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved
Technical/Catalog Information | STD90N02L |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 2050pF @ 16V |
Power - Max | 70W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 22nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STD90N02L STD90N02L 497 7978 1 ND 49779781ND 497-7978-1 |