ApplicationELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGSWITCH MODE POWER SUPPLIESSpecifications Symbol Parameter Value Unit VCES Collector-Base Voltage (IBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage(IC...
STD83003: ApplicationELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGSWITCH MODE POWER SUPPLIESSpecifications Symbol Parameter Value Unit VCES Collector-Base Voltage (IBE = 0) 700 V...
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Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Base Voltage (IBE = 0) |
700 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
400 |
V |
VEBO |
Emitter-Base Voltage |
V(BR)EBO |
V |
IC |
Collector Current |
1.5 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
3 |
A |
IB |
Base Current |
0.75 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
1.5 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
20 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The device STD83003 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STD83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STD93003, its complementary PNP transistor.