MOSFET N-Channel 620V 1.1 Ohms 5.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.5 A | ||
Resistance Drain-Source RDS (on) : | 1.28 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | STD6N62K3 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25° C | 5.5A |
Rds On (Max) @ Id, Vgs | 1.28 Ohm @ 2.8A, 10V |
Input Capacitance (Ciss) @ Vds | 706pF @ 50V |
Power - Max | 90W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 25.7nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STD6N62K3 STD6N62K3 497 8480 6 ND 49784806ND 497-8480-6 |