Features: ` TYPICAL RDS(on) = 0.0075` OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSSpecifications Symbol Paramete...
STD60NF3LL: Features: ` TYPICAL RDS(on) = 0.0075` OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SPECIFIC...
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Symbol | Parameter |
Value |
Unit |
VDS | Collector-Source Voltage (VGS = 0 V) |
30 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
VGS | Gate-Source Voltage |
±16 |
V |
ID | Drain Current (continuous) at TC = 25 |
60 |
A |
ID | Drain Current (continuous) at TC = 100 |
43 |
A |
IDM(`) | Drain Current (pulsed) |
240 |
A |
PTOT | Total Dissipation at TC = 25 |
100 |
W |
Derating Factor |
0.67 |
W/ | |
EAS(1) | Single Pulse Avalanche Energy |
700 |
mJ |
Tstg | Storage Temperature |
-55 to 175 |
|
Tj | Max. Operating Junction Temperature |
This application specific Power Mosfet STD60NF3LL is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between onresistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.