MOSFET N Ch 55V 6.5mohm 80A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.0085 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Type |
VDSS |
RDS(on) |
ID |
Pw |
STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 |
55V 55V 55V 55V 55V |
<8.5m <8.5m <8.5m <8.5m <8.5m |
80A 80A 42A 80A 80A |
110W 110W 30W 110W 110W |
This STD60N55F3 n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Technical/Catalog Information | STD60N55F3 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 32A, 10V |
Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
Power - Max | 110W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STD60N55F3 STD60N55F3 497 7972 6 ND 49779726ND 497-7972-6 |