STD60N55F3

MOSFET N Ch 55V 6.5mohm 80A

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SeekIC No. : 00148164 Detail

STD60N55F3: MOSFET N Ch 55V 6.5mohm 80A

floor Price/Ceiling Price

US $ .72~1.27 / Piece | Get Latest Price
Part Number:
STD60N55F3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.27
  • $1.02
  • $.74
  • $.72
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Features:

Type
VDSS
RDS(on)
ID
Pw
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
55V
55V
55V
55V
55V
<8.5m
<8.5m
<8.5m
<8.5m
<8.5m
80A
80A
42A
80A
80A
110W
110W
30W
110W
110W
` Standard threshold drive
` 100% avalanche tested



Application

· Switching application


Description

This STD60N55F3 n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.




Parameters:

Technical/Catalog InformationSTD60N55F3
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max110W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD60N55F3
STD60N55F3
497 7972 6 ND
49779726ND
497-7972-6



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