STD50NH02L-1

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 60W
Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Drain to Source Voltage (Vdss): 24V
Manufacturer: STMicroelectronics
Series: STripFET™


Parameters:

Technical/Catalog Information	STD50NH02L-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1400pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD50NH02L 1 STD50NH02L1 497 3519 5 ND 49735195ND 497-3519-5