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STD50NH02L-1

MOSFET N-CH 24V 50A I-PAK

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SeekIC No. : 003430339 Detail

STD50NH02L-1: MOSFET N-CH 24V 50A I-PAK

STD50NH02L-1 Data Sheet

floor Price/Ceiling Price

US $ .32~.84 / Piece | Get Latest Price
Part Number:
STD50NH02L-1
Mfg:
Supply Ability:
5000

Price Break

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  • 10~25
  • 25~100
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  • 2500~5000
  • Unit Price
  • $.84
  • $.74
  • $.67
  • $.59
  • $.52
  • $.46
  • $.36
  • $.34
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: STripFET™ Manufacturer: STMicroelectronics
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) @ Vgs: 24nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Power - Max: 60W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 60W
Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Drain to Source Voltage (Vdss): 24V
Manufacturer: STMicroelectronics
Series: STripFET™


Parameters:

Technical/Catalog InformationSTD50NH02L-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD50NH02L 1
STD50NH02L1
497 3519 5 ND
49735195ND
497-3519-5



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