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STD4NS25T4: MOSFET N-Ch 250 Volt 4 Amp

STD4NS25T4 Data Sheet

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Part Number:: STD4NS25T4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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MOSFET N-channel 25 V 40 A DPAK IPAK

Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4 A
Resistance Drain-Source RDS (on) :	1100 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 1100 mOhms

Parameters:

Technical/Catalog Information	STD4NS25T4
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	355pF @ 25V
Power - Max	50W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD4NS25T4 STD4NS25T4 497 8479 6 ND 49784796ND 497-8479-6

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STD4NS25T4

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