Features: ` TYPICAL RDS(on) = 0.01 ` TYPICAL Qg = 35 nC @ 10V` OPTIMAL RDS(on)x Qg TRADE-OFF` CONDUCTION LOSSESREDUCED` SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS ...
STD40NF02L: Features: ` TYPICAL RDS(on) = 0.01 ` TYPICAL Qg = 35 nC @ 10V` OPTIMAL RDS(on)x Qg TRADE-OFF` CONDUCTION LOSSESREDUCED` SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH...
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Symbol | Parameter |
Value |
Unit |
VDS | Collector-Source Voltage (VGS = 0 V) |
20 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
20 |
V |
VGS | Gate-Source Voltage |
±20 |
V |
ID(•) | Drain Current (continuous) at TC = 25 |
20 |
A |
ID(•) | Drain Current (continuous) at TC = 100 |
20 |
A |
IDM(••) | Drain Current (pulsed) |
80 |
A |
Ptot | Total Dissipation at TC = 25 |
55 |
W |
Derating Factor |
0.37 |
W/ | |
Tstg | Storage Temperature |
-65 to 175 |
|
Tj | Max. Operating Junction Temperature |
175 |
This application specific Power Mosfet is the third generation of STMicroelectronics STD40NF02L unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.