STD40NE03L

Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-...

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SeekIC No. : 004507483 Detail

STD40NE03L: Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH C...

floor Price/Ceiling Price

Part Number:
STD40NE03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/4

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.012 W
 EXCEPTIONAL dv/dt CAPABILITY
 100% AVALANCHE TESTED
 LOW GATE CHARGE
 APPLICATIONORIENTED CHARACTERIZATION
 ADD SUFFIX "T4" FORORDERING IN TAPE & REEL



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

30

V

VGE
Gate-Emitter Voltage
±20
V

ID

Drain Current (continuous) at TC = 25°C

20**

A

ID
Drain Current (continuous) at TC = 100°C
20**

A
IDM ()
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
55
W
Derating Factor
0.37
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns

Tstg

Storage Temperature

- 65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This STD40NE03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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