STD40NE03L Selling Leads, Price trend, STD40NE03L DataSheet download, circuit diagram from SeekIC.com

Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-...

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SeekIC No. : 004507483 Detail

STD40NE03L: Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH C...

STD40NE03L Data Sheet

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Part Number:: STD40NE03L
Supply Ability:: 5000

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1~5000

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Upload time: 2024/7/15

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Product Details

Description

Features:

TYPICAL R_DS(on) = 0.012 W
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATIONORIENTED CHARACTERIZATION
ADD SUFFIX "T4" FORORDERING IN TAPE & REEL

Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	30	V
V_GE	Gate-Emitter Voltage	±20	V
I_D	Drain Current (continuous) at T_C = 25°C	20**	A
I_D	Drain Current (continuous) at T_C= 100°C	20**	A
I_{DM ()}	Drain Current (pulsed)	160	A
P_TOT	Total Dissipation at T_C = 25°C	55	W
	Derating Factor	0.37	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	7	V/ns
T_stg	Storage Temperature	- 65 to 175	°C
T_j	Max. Operating Junction Temperature	175	°C

Description

This STD40NE03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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STD40NE03L

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