Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-...
STD40NE03L: Features: TYPICAL RDS(on) = 0.012 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH C...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
VGE |
Gate-Emitter Voltage |
±20 |
V |
ID |
Drain Current (continuous) at TC = 25°C |
20** |
A |
ID |
Drain Current (continuous) at TC = 100°C |
20** |
A |
IDM () |
Drain Current (pulsed) |
160 |
A |
PTOT |
Total Dissipation at TC = 25°C |
55 |
W |
|
Derating Factor |
0.37 |
W/°C |
dv/dt (1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STD40NE03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.